Fiyat için teklif alın
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Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Maximum Gate Source Voltage V
- ±30
- Number Of Elements
- 1
- Ppap
- No
- Tab
- Tab
- Turn Off Delay Time
- 80 ns
- Typical Turnon Delay Time Ns
- 36
- Drain To Source Breakdown Voltage
- 1kV
- Turn On Delay Time
- 36 ns
- Pcb Changed
- 3
- Power Dissipation
- 700W
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Configuration
- Single
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Typical Rise Time Ns
- 35
- Uzunluk
- 19.96mm
- Transistor Application
- SWITCHING
- Maximum Continuous Drain Current A
- 22
- Kurşunsuz Kodu
- yes
- Power Dissipation Max
- 700W Tc
- JESD-609 Kodu
- e1
- Fet Type
- N-Channel
- Automotive
- No
- Direnç
- 600Ohm
- Typical Turnoff Delay Time Ns
- 80
- Minimum Operating Temperature C
- -55
- Drain To Source Voltage Vdss
- 1000V
- Pulsed Drain Currentmax Idm
- 50A
- Input Capacitance Ciss Max Vds
- 7050pF @ 25V
- Montaj Tipi
- Through Hole
- Ambalaj
- Tube
- Rise Time
- 35ns
- Continuous Drain Current Id
- 22A
- Package Length
- 19.96(Max)
- Package Height
- 26.16(Max)
- Transistor Element Material
- SILICON
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Genişlik
- 5.13mm
- Package Width
- 5.13(Max)
- Parça Durumu
- Active
- Mounting
- Through Hole
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