IXTH60N20L2

Teknik Özellikler

Fet Type

N-Channel

Terminal Pozisyonu

SINGLE

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Qualification Status

Not Qualified

Montaj

Through Hole

Transistor Application

AMPLIFIER

Vgs Max

±20V

Kurşunsuz

Lead Free

Case Connection

DRAIN

RoHS Durumu

ROHS3 Compliant

Ds Breakdown Voltagemin

200V

Continuous Drain Current Id

60A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Element Material

SILICON

Configuration

SINGLE WITH BUILT-IN DIODE

Drainsource On Resistancemax

0.045Ohm

JESD-609 Kodu

e1

Kılıf / Paket

TO-247-3

Operating Mode

ENHANCEMENT MODE

Additional Feature

AVALANCHE RATED

Pin Sayısı

3

Gate Charge Qg Max Vgs

255nC @ 10V

Input Capacitance Ciss Max Vds

10500pF @ 25V

Kurşunsuz Kodu

yes

Seri

Linear L2™

Pin Sayısı

3

Avalanche Energy Rating Eas

2000 mJ

Power Dissipation Max

540W Tc

Vgsth Max Id

4.5V @ 250μA

Fabrika Tedarik Süresi

28 Weeks

Drive Voltage Max Rds On Min Rds On

10V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Drain To Source Voltage Vdss

200V

Yayın Yılı

2009

Çalışma Sıcaklığı

-55°C~150°C TJ

Parça Durumu

Active

Number Of Elements

1

Current Continuous Drain Id25

60A Tc

Pulsed Drain Currentmax Idm

150A