Fiyat için teklif alın
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Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Supplier Package
- TO-247
- Jesd30 Code
- R-PSFM-T3
- Package Width
- 5.3(Max)
- Maximum Continuous Drain Current A
- 24
- RoHS Durumu
- ROHS3 Compliant
- Automotive
- No
- Transistor Application
- SWITCHING
- Vgs Max
- ±30V
- Gate To Source Voltage Vgs
- 30V
- Package Length
- 16.26(Max)
- Transistor Element Material
- SILICON
- Channel Mode
- Enhancement
- Maximum Power Dissipation Mw
- 480000
- Ds Breakdown Voltagemin
- 500V
- Continuous Drain Current Id
- 24A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Tab
- Tab
- Maximum Gate Source Voltage V
- ±30
- Input Capacitance Ciss Max Vds
- 2890pF @ 25V
- Category
- Power MOSFET
- Maximum Operating Temperature C
- 150
- Radyasyon Dayanımı
- No
- Pin Sayısı
- 3
- Channel Type
- N
- Ppap
- No
- JESD-609 Kodu
- e1
- Technology
- Si
- Operating Mode
- ENHANCEMENT MODE
- Typical Input Capacitance Vds Pf
- 2890@25V
- Parça Durumu
- Active
- Current Continuous Drain Id25
- 24A Tc
- Maximum Drain Source Resistance Mohm
- 270@10V
- Montaj Tipi
- Through Hole
- Rds On Max Id Vgs
- 270m Ω @ 12A, 10V
- Vds Drainsource Breakdown Voltage
- 500 V
- Svhc
- Yes
- Typical Gate Charge10v Nc
- 48
- Fabrika Tedarik Süresi
- 28 Weeks
- Rds On Drainsource Resistance
- 270 mOhms
- Vgsth Max Id
- 4.5V @ 250μA
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