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Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Transistor Element Material
- SILICON
- Package Length
- 16.26(Max)
- Tab
- Tab
- Maximum Gate Source Voltage V
- ±20
- Maximum Power Dissipation Mw
- 540000
- Ds Breakdown Voltagemin
- 500V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Continuous Drain Current Id
- 40A
- Channel Mode
- Enhancement
- RoHS Durumu
- ROHS3 Compliant
- Package Width
- 5.3(Max)
- Maximum Continuous Drain Current A
- 40
- Typical Turnon Delay Time Ns
- 50
- Reach Svhc
- No SVHC
- Supplier Package
- TO-247AD
- Transistor Application
- SWITCHING
- Vgs Max
- ±20V
- Automotive
- No
- ECCN Kodu
- EAR99
- Rds On Max Id Vgs
- 170m Ω @ 20A, 10V
- Montaj Tipi
- Through Hole
- Maximum Drain Source Resistance Mohm
- 170@10V
- Current Continuous Drain Id25
- 40A Tc
- Parça Durumu
- Active
- Vgsth Max Id
- 4.5V @ 250μA
- Mounting
- Through Hole
- Number Of Elements Per Chip
- 1
- Typical Gate Charge10v Nc
- 320
- Svhc
- Yes
- Radyasyon Dayanımı
- No
- Pin Sayısı
- 3
- Channel Type
- N
- Input Capacitance Ciss Max Vds
- 10400pF @ 25V
- Category
- Power MOSFET
- Maximum Operating Temperature C
- 150
- Nominal Vgs
- 2.5 V
- Operating Mode
- ENHANCEMENT MODE
- Typical Input Capacitance Vds Pf
- 10400@25V
- JESD-609 Kodu
- e1
- Ppap
- No
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