IXTH260N055T2

Teknik Özellikler

Terminal Pozisyonu

SINGLE

Fet Type

N-Channel

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Qualification Status

Not Qualified

Montaj

Through Hole

Transistor Application

SWITCHING

Vgs Max

±20V

Jesd30 Code

R-PSFM-T3

Jedec95 Code

TO-247AD

Case Connection

DRAIN

RoHS Durumu

ROHS3 Compliant

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

260A

Ds Breakdown Voltagemin

55V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Element Material

SILICON

Configuration

SINGLE WITH BUILT-IN DIODE

Drainsource On Resistancemax

0.0033Ohm

JESD-609 Kodu

e1

Kılıf / Paket

TO-247-3

Additional Feature

AVALANCHE RATED

Operating Mode

ENHANCEMENT MODE

Gate Charge Qg Max Vgs

140nC @ 10V

Seri

TrenchT2™

Kurşunsuz Kodu

yes

Input Capacitance Ciss Max Vds

10800pF @ 25V

Pin Sayısı

3

Avalanche Energy Rating Eas

600 mJ

Power Dissipation Max

480W Tc

Vgsth Max Id

4V @ 250μA

Fabrika Tedarik Süresi

28 Weeks

Drive Voltage Max Rds On Min Rds On

10V

Drain To Source Voltage Vdss

55V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Çalışma Sıcaklığı

-55°C~175°C TJ

Yayın Yılı

2009

Current Continuous Drain Id25

260A Tc

Number Of Elements

1

Parça Durumu

Active

Pulsed Drain Currentmax Idm

780A