IXTA2R4N120P

Teknik Özellikler

Configuration

Single

Power Dissipation

125W

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drain To Source Breakdown Voltage

1.2kV

Kurşunsuz

Lead Free

Case Connection

DRAIN

Terminal Formu

GULL WING

Terminal Kaplaması

Matte Tin (Sn)

Fet Type

N-Channel

Qualification Status

Not Qualified

Montaj

Surface Mount

Typical Gate Charge Vgs Nc

37@10V

Hts

8541.29.00.95

Pulsed Drain Currentmax Idm

6A

Rise Time

25ns

Number Of Elements

1

Yayın Yılı

2008

Çalışma Sıcaklığı

-55°C~150°C TJ

Drain To Source Voltage Vdss

1200V

Typical Turnoff Delay Time Ns

70

Terminal Sayısı

2

Ambalaj

Tube

Power Dissipation Max

125W Tc

Avalanche Energy Rating Eas

200 mJ

Drive Voltage Max Rds On Min Rds On

10V

Maximum Drain Source Voltage V

1200

Kurşunsuz Kodu

yes

Seri

Polar™

Gate Charge Qg Max Vgs

37nC @ 10V

Typical Fall Time Ns

32

Package Height

4.7(Max)

Eu Rohs

Compliant

Typical Rise Time Ns

25

Minimum Operating Temperature C

-55

Pcb Changed

2

Additional Feature

AVALANCHE RATED

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate To Source Voltage Vgs

20V

Package Length

10.41(Max)

Transistor Element Material

SILICON