IXTA1R6N50D2

Teknik Özellikler

Drain To Source Voltage Vdss

500V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

REACH Uyumluluk Kodu

unknown

Yayın Yılı

2009

Çalışma Sıcaklığı

-55°C~150°C TJ

Current Continuous Drain Id25

1.6A Tc

Parça Durumu

Active

Number Of Elements

1

Rds On Max Id Vgs

2.3 Ω @ 800mA, 0V

Ambalaj

Tube

Terminal Sayısı

2

Montaj Tipi

Surface Mount

Power Dissipation Max

100W Tc

Fabrika Tedarik Süresi

19 Weeks

Drive Voltage Max Rds On Min Rds On

10V

Gate Charge Qg Max Vgs

23.7nC @ 5V

Kurşunsuz Kodu

yes

Input Capacitance Ciss Max Vds

645pF @ 25V

Pin Sayısı

3

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Additional Feature

UL RECOGNIZED

Transistor Element Material

SILICON

Configuration

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current Id

1.6A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Jesd30 Code

R-PSSO-G2

Jedec95 Code

TO-263AA

Case Connection

DRAIN

RoHS Durumu

ROHS3 Compliant

Fet Feature

Depletion Mode

Fet Type

N-Channel

Terminal Pozisyonu

SINGLE

Terminal Formu

GULL WING

Qualification Status

Not Qualified

Montaj

Surface Mount

Transistor Application

AMPLIFIER

Vgs Max

±20V