IXSX50N60AU1

Teknik Özellikler

Transistor Element Material

SILICON

Gate Charge

190nC

Nem Hassasiyeti (MSL)

1 (Unlimited)

Test Conditions

480V, 50A, 2.7 Ω, 15V

Element Configuration

Single

Reverse Recovery Time

50 ns

Jesd30 Code

R-PSIP-T3

RoHS Durumu

RoHS Compliant

Case Connection

COLLECTOR

Vceon Max Vge Ic

2.7V @ 15V, 50A

Transistor Application

MOTOR CONTROL

Montaj

Through Hole

Qualification Status

Not Qualified

Max Collector Current

75A

Yayın Yılı

1997

Çalışma Sıcaklığı

-55°C~150°C TJ

Parça Durumu

Obsolete

Number Of Elements

1

Gateemitter Voltagemax

20V

Ambalaj

Tube

Gateemitter Thr Voltagemax

8V

Terminal Sayısı

3

Fall Timemax Tf

600ns

Montaj Tipi

Through Hole

Polaritychannel Type

N-CHANNEL

Switching Energy

6mJ (off)

Power Max

300W

Max Power Dissipation

300W

Temel Parça No

IXS*50N60

Turn On Time

70 ns

Pin Sayısı

3

Current Collector Pulsed Icm

200A

Turn Off Timenom Toff

340 ns

Giriş Tipi

Standard

Collectoremitter Breakdown Voltage

600V

Td Onoff25c

70ns/200ns

Collector Emitter Voltage Vceo

2.7V

Kılıf / Paket

TO-247-3