IXSX35N120BD1

Teknik Özellikler

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Element Configuration

Single

Test Conditions

960V, 35A, 5 Ω, 15V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Element Material

SILICON

Gate Charge

120nC

Max Collector Current

70A

Qualification Status

Not Qualified

Montaj

Through Hole

Igbt Type

PT

Transistor Application

MOTOR CONTROL

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Vceon Max Vge Ic

3.6V @ 15V, 35A

Voltage Collector Emitter Breakdown Max

1200V

Case Connection

COLLECTOR

RoHS Durumu

RoHS Compliant

Reverse Recovery Time

40 ns

Kurşunsuz

Lead Free

Power Max

300W

Switching Energy

5mJ (off)

Polaritychannel Type

N-CHANNEL

Montaj Tipi

Through Hole

Terminal Sayısı

3

Gateemitter Thr Voltagemax

6V

Ambalaj

Tube

Gateemitter Voltagemax

20V

Number Of Elements

1

Parça Durumu

Obsolete

Weight

7.300002g

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Çalışma Sıcaklığı

-55°C~150°C TJ

Yayın Yılı

2000

Kılıf / Paket

TO-247-3

Td Onoff25c

36ns/160ns

Collector Emitter Voltage Vceo

1.2kV

Collectoremitter Breakdown Voltage

1.2kV

Giriş Tipi

Standard

Collectoremitter Saturation Voltage

3.6V

Turn Off Timenom Toff

580 ns

JESD-609 Kodu

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