IXST30N60B

Teknik Özellikler

Vceon Max Vge Ic

2V @ 15V, 30A

Turn Off Delay Time

150 ns

Igbt Type

PT

Max Collector Current

55A

Transistor Application

POWER CONTROL

Jesd30 Code

R-PSSO-G2

RoHS Durumu

RoHS Compliant

Nem Hassasiyeti (MSL)

1 (Unlimited)

Test Conditions

480V, 30A, 4.7 Ω, 15V

Element Configuration

Single

Transistor Element Material

SILICON

Turn Off Timenom Toff

520 ns

JESD-609 Kodu

e3

Collectoremitter Breakdown Voltage

600V

Max Power Dissipation

200W

Pin Sayısı

4

Turn On Time

70 ns

Polaritychannel Type

N-CHANNEL

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Parça Durumu

Obsolete

Montaj Tipi

Surface Mount

Fall Timemax Tf

270ns

Terminal Kaplaması

Matte Tin (Sn)

Terminal Formu

GULL WING

Montaj

Surface Mount

Qualification Status

Not Qualified

Kurşunsuz

Lead Free

Case Connection

COLLECTOR

Turn On Delay Time

30 ns

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Gate Charge

100nC

Collectoremitter Saturation Voltage

2V

Td Onoff25c

30ns/150ns

Collector Emitter Voltage Vceo

600V

Giriş Tipi

Standard

Kılıf / Paket

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Additional Feature

HIGH SPEED

Kurşunsuz Kodu

yes

Temel Parça No

IXS*30N60

Current Collector Pulsed Icm

110A