IXSK80N60B

Teknik Özellikler

Igbt Type

PT

Max Collector Current

160A

Qualification Status

Not Qualified

Montaj

Through Hole

Transistor Application

POWER CONTROL

Vceon Max Vge Ic

2.5V @ 15V, 80A

Case Connection

COLLECTOR

RoHS Durumu

RoHS Compliant

Element Configuration

Single

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Test Conditions

480V, 80A, 2.7 Ω, 15V

Transistor Element Material

SILICON

Gate Charge

240nC

Kılıf / Paket

TO-264-3, TO-264AA

Additional Feature

LOW SATURATION VOLTAGE

Turn Off Timenom Toff

450 ns

Collectoremitter Saturation Voltage

2.5V

Td Onoff25c

60ns/140ns

Collector Emitter Voltage Vceo

600V

Giriş Tipi

Standard

Collectoremitter Breakdown Voltage

600V

Pin Sayısı

3

Turn On Time

120 ns

Current Collector Pulsed Icm

300A

Max Power Dissipation

500W

Pin Sayısı

3

Temel Parça No

IXS*80N60

Kurşunsuz Kodu

yes

Power Max

500W

Switching Energy

4.2mJ (off)

Polaritychannel Type

N-CHANNEL

Gateemitter Thr Voltagemax

8V

Ambalaj

Tube

Gateemitter Voltagemax

20V

Montaj Tipi

Through Hole

Terminal Sayısı

3

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2003

Çalışma Sıcaklığı

-55°C~150°C TJ