IXSH25N120A

Teknik Özellikler

Collector Emitter Voltage Vceo

1.2kV

Kılıf / Paket

TO-247-3

Turn On Time

300 ns

Gate Charge

120nC

Max Collector Current

50A

Case Connection

COLLECTOR

Terminal Kaplaması

Matte Tin (Sn)

Polaritychannel Type

N-CHANNEL

Yayın Yılı

2000

Vceon Max Vge Ic

4V @ 15V, 25A

Kurşunsuz Kodu

yes

Additional Feature

LOW SATURATION VOLTAGE

Test Conditions

960V, 25A, 18 Ω, 15V

Element Configuration

Single

Power Max

200W

Tepe Reflow Sıcaklığı (°C)

260

Voltage Collector Emitter Breakdown Max

1200V

Weight

6.500007g

Qualification Status

Not Qualified

Current Collector Pulsed Icm

80A

Transistor Application

POWER CONTROL

Switching Energy

9.6mJ (off)

Jedec95 Code

TO-247AD

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gateemitter Voltagemax

20V

RoHS Durumu

RoHS Compliant

Td Onoff25c

100ns/450ns

Parça Durumu

Obsolete

Terminal Sayısı

3

Pin Sayısı

3

Transistor Element Material

SILICON

Collectoremitter Breakdown Voltage

1.2kV

Turn Off Timenom Toff

1350 ns

Giriş Tipi

Standard

Ambalaj

Tube

Çalışma Sıcaklığı

-55°C~150°C TJ

JESD-609 Kodu

e3

Max Power Dissipation

200W

Number Of Elements

1

Tepe Reflow Süresi (maks. sn)

35