IXRP15N120

Teknik Özellikler

Jedec95 Code

TO-220AB

Jesd30 Code

R-PSFM-T3

Switching Energy

1.1mJ (on), 130μJ (off)

Transistor Application

POWER CONTROL

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Element Material

SILICON

Parça Durumu

Obsolete

Pin Sayısı

3

Terminal Sayısı

3

RoHS Durumu

RoHS Compliant

Gateemitter Voltagemax

20V

Giriş Tipi

Standard

Turn Off Timenom Toff

253 ns

Collectoremitter Breakdown Voltage

1.2kV

Çalışma Sıcaklığı

-55°C~150°C TJ

Ambalaj

Tube

Max Power Dissipation

300W

JESD-609 Kodu

e3

Montaj Tipi

Through Hole

Number Of Elements

1

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Gateemitter Thr Voltagemax

6V

Montaj

Through Hole

Kılıf / Paket

TO-220-3

Collector Emitter Voltage Vceo

2.95V

Max Collector Current

25A

Gate Charge

36nC

Turn On Time

33.5 ns

Polaritychannel Type

N-CHANNEL

Case Connection

COLLECTOR

Terminal Kaplaması

Matte Tin (Sn)

Kurşunsuz Kodu

yes

Vceon Max Vge Ic

2.95V @ 15V, 10A

Yayın Yılı

2011

Test Conditions

600V, 10A, 47 Ω, 15V

Power Max

300W

Igbt Type

NPT

Element Configuration

Single

Weight

2.299997g

Voltage Collector Emitter Breakdown Max

1200V