IXGX55N120A3H1

Teknik Özellikler

Igbt Type

PT

Additional Feature

ULTRA FAST, LOW CONDUCTION LOSS

Qualification Status

Not Qualified

Mounting

Through Hole

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Reverse Recovery Time

200 ns

Tab

Tab

Maximum Collectoremitter Voltage V

1200

Maximum Gate Emitter Voltage V

±20

Turn On Time

70 ns

Collector Emitter Voltage Vceo

2.3V

Yayın Yılı

2012

Vceon Max Vge Ic

2.3V @ 15V, 55A

Operating Temperature Max

150°C

Kurşunsuz Kodu

yes

Case Connection

COLLECTOR

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

JESD-609 Kodu

e1

Max Power Dissipation

460W

Configuration

SINGLE WITH BUILT-IN DIODE

Automotive

No

Maximum Gate Emitter Leakage Current Ua

0.1

Gateemitter Thr Voltagemax

5V

Channel Type

N

Number Of Elements

1

Fabrika Tedarik Süresi

8 Weeks

Maximum Power Dissipation Mw

460000

Ppap

No

Nem Hassasiyeti (MSL)

1 (Unlimited)

Package Length

16.13(Max)

Jesd30 Code

R-PSIP-T3

Switching Energy

5.1mJ (on), 13.3mJ (off)

Current Collector Pulsed Icm

400A

Transistor Application

POWER CONTROL

Maximum Continuous Collector Current A

125

Transistor Element Material

SILICON

Gateemitter Voltagemax

20V

Td Onoff25c

23ns/365ns

Terminal Sayısı

3

Power Max

460W