IXGX40N60BD1

Teknik Özellikler

Yayın Yılı

2003

Kurşunsuz Kodu

yes

Vceon Max Vge Ic

2.1V @ 15V, 40A

Polaritychannel Type

N-CHANNEL

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Case Connection

COLLECTOR

Gate Charge

116nC

Max Collector Current

75A

Turn On Time

55 ns

Kılıf / Paket

TO-247-3

Collector Emitter Voltage Vceo

600V

Qualification Status

Not Qualified

Reverse Recovery Time

35 ns

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Element Configuration

Single

Power Max

250W

Test Conditions

480V, 40A, 4.7 Ω, 15V

Giriş Tipi

Standard

Collectoremitter Breakdown Voltage

600V

Turn Off Timenom Toff

570 ns

Transistor Element Material

SILICON

Td Onoff25c

25ns/180ns

RoHS Durumu

RoHS Compliant

Gateemitter Voltagemax

20V

Parça Durumu

Obsolete

Pin Sayısı

3

Terminal Sayısı

3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Switching Energy

2.7mJ (off)

Current Collector Pulsed Icm

150A

Transistor Application

MOTOR CONTROL

Gateemitter Thr Voltagemax

5V

Montaj

Through Hole

Temel Parça No

IXG*40N60

Montaj Tipi

Through Hole

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Number Of Elements

1

Pin Sayısı

3

JESD-609 Kodu

e1

Max Power Dissipation

250W