IXGX32N170AH1

Teknik Özellikler

Channel Type

N

Number Of Elements

1

Fabrika Tedarik Süresi

8 Weeks

Max Power Dissipation

350W

JESD-609 Kodu

e1

Configuration

Single

Çalışma Sıcaklığı

-55°C~150°C TJ

Maximum Gate Emitter Leakage Current Ua

0.1

Automotive

No

Maximum Continuous Collector Current A

32

Transistor Element Material

SILICON

Td Onoff25c

27ns/270ns

Terminal Sayısı

3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ppap

No

Maximum Power Dissipation Mw

350

Package Length

16.13(Max)

Switching Energy

4.1mJ (on), 1.25mJ (off)

Current Collector Pulsed Icm

110A

Transistor Application

POWER CONTROL

Qualification Status

Not Qualified

Mounting

Through Hole

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Reverse Recovery Time

150 ns

Collectoremitter Saturation Voltage

4V

Tab

Tab

Igbt Type

NPT

Yayın Yılı

2004

Kurşunsuz Kodu

yes

Vceon Max Vge Ic

5V @ 15V, 21A

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Case Connection

COLLECTOR

Maximum Collectoremitter Voltage V

1700

Maximum Gate Emitter Voltage V

±20

Turn On Time

74 ns

Collector Emitter Voltage Vceo

1.7kV

Montaj

Through Hole

Temel Parça No

IXG*32N170

Eu Rohs

Compliant with Exemption

Montaj Tipi

Through Hole