IXGT50N90B2

Teknik Özellikler

Turn On Time

48 ns

Gate Charge

135nC

Max Collector Current

75A

Collector Emitter Voltage Vceo

900V

Kılıf / Paket

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Yayın Yılı

2005

Vceon Max Vge Ic

2.7V @ 15V, 50A

Kurşunsuz Kodu

yes

Case Connection

COLLECTOR

Terminal Kaplaması

PURE TIN

Polaritychannel Type

N-CHANNEL

Element Configuration

Single

Igbt Type

PT

Power Max

400W

Test Conditions

720V, 50A, 5 Ω, 15V

Qualification Status

Not Qualified

Collectoremitter Saturation Voltage

2.7V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Weight

4.500005g

Nem Hassasiyeti (MSL)

1 (Unlimited)

Current Collector Pulsed Icm

200A

Transistor Application

POWER CONTROL

Jesd30 Code

R-PSSO-G2

Switching Energy

4.7mJ (off)

Collectoremitter Breakdown Voltage

900V

Turn Off Timenom Toff

820 ns

Giriş Tipi

Standard

RoHS Durumu

ROHS3 Compliant

Td Onoff25c

20ns/350ns

Terminal Sayısı

2

Pin Sayısı

4

Parça Durumu

Active

Transistor Element Material

SILICON

Seri

HiPerFAST™

Max Power Dissipation

400W

REACH Uyumluluk Kodu

unknown

JESD-609 Kodu

e3

Ambalaj

Tube

Çalışma Sıcaklığı

-55°C~150°C TJ

Montaj

Surface Mount