IXGT35N120B

Teknik Özellikler

Test Conditions

960V, 35A, 5 Ω, 15V

Additional Feature

LOW SATURATION VOLTAGE, LOW SWITCHING LOSSES

Igbt Type

PT

Power Max

300W

Element Configuration

Single

Voltage Collector Emitter Breakdown Max

1200V

Weight

4.500005g

Collectoremitter Saturation Voltage

3.3V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Qualification Status

Not Qualified

Collector Emitter Voltage Vceo

1.2kV

Kılıf / Paket

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Max Collector Current

70A

Gate Charge

170nC

Turn On Time

86 ns

Polaritychannel Type

N-CHANNEL

Case Connection

COLLECTOR

Terminal Kaplaması

PURE TIN

Vceon Max Vge Ic

3.3V @ 15V, 35A

Kurşunsuz Kodu

yes

Yayın Yılı

2000

Çalışma Sıcaklığı

-55°C~150°C TJ

Ambalaj

Tube

REACH Uyumluluk Kodu

unknown

JESD-609 Kodu

e3

Max Power Dissipation

300W

Seri

HiPerFAST™

Montaj Tipi

Surface Mount

Fabrika Tedarik Süresi

8 Weeks

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Number Of Elements

1

Terminal Formu

GULL WING

Temel Parça No

IXG*35N120

Montaj

Surface Mount

Jesd30 Code

R-PSSO-G2

Switching Energy

3.8mJ (off)

Transistor Application

POWER CONTROL

Current Collector Pulsed Icm

140A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Element Material

SILICON