IXGT32N60C

Teknik Özellikler

Giriş Tipi

Standard

Turn Off Timenom Toff

110 ns

Collectoremitter Breakdown Voltage

600V

Transistor Element Material

SILICON

Terminal Sayısı

2

Pin Sayısı

3

Parça Durumu

Obsolete

Gateemitter Voltagemax

20V

RoHS Durumu

RoHS Compliant

Td Onoff25c

25ns/85ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Switching Energy

320μJ (off)

Jesd30 Code

R-PSSO-G2

Transistor Application

POWER CONTROL

Current Collector Pulsed Icm

120A

Gateemitter Thr Voltagemax

5V

Terminal Formu

GULL WING

Temel Parça No

IXG*32N60

Montaj

Surface Mount

Montaj Tipi

Surface Mount

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Number Of Elements

1

Max Power Dissipation

200W

JESD-609 Kodu

e3

Seri

HiPerFAST™, Lightspeed™

Çalışma Sıcaklığı

-55°C~150°C TJ

Ambalaj

Tube

Vceon Max Vge Ic

2.5V @ 15V, 32A

Kurşunsuz Kodu

yes

Yayın Yılı

2000

Polaritychannel Type

N-CHANNEL

Case Connection

COLLECTOR

Terminal Kaplaması

Matte Tin (Sn)

Max Collector Current

60A

Gate Charge

110nC

Turn On Time

25 ns

Collector Emitter Voltage Vceo

600V

Fall Timemax Tf

160ns

Kılıf / Paket

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Qualification Status

Not Qualified