IXGT2N250

Teknik Özellikler

JESD-609 Kodu

e3

Max Power Dissipation

32W

Çalışma Sıcaklığı

-55°C~150°C TJ

Ambalaj

Tube

Gateemitter Thr Voltagemax

5.5V

Terminal Formu

GULL WING

Montaj

Surface Mount

Montaj Tipi

Surface Mount

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Number Of Elements

1

Fabrika Tedarik Süresi

8 Weeks

Nem Hassasiyeti (MSL)

1 (Unlimited)

Jesd30 Code

R-PSSO-G2

Current Collector Pulsed Icm

13.5A

Transistor Application

POWER CONTROL

Giriş Tipi

Standard

Collectoremitter Breakdown Voltage

2.5kV

Turn Off Timenom Toff

278 ns

Transistor Element Material

SILICON

Gateemitter Voltagemax

20V

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

2

Pin Sayısı

4

Parça Durumu

Active

Element Configuration

Single

Power Max

32W

Additional Feature

LOW CONDUCTION LOSS

Qualification Status

Not Qualified

Voltage Collector Emitter Breakdown Max

2500V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Gate Charge

10.5nC

Max Collector Current

5.5A

Turn On Time

115 ns

Collector Emitter Voltage Vceo

3.1V

Kılıf / Paket

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Yayın Yılı

2009

Vceon Max Vge Ic

3.1V @ 15V, 2A

Kurşunsuz Kodu

yes

Polaritychannel Type

N-CHANNEL

Case Connection

COLLECTOR