IXGT24N170A

Teknik Özellikler

Collector Emitter Voltage Vceo

1.7kV

Turn On Time

98 ns

Terminal Kaplaması

Matte Tin (Sn)

Case Connection

COLLECTOR

Yayın Yılı

2004

Kurşunsuz Kodu

yes

Vceon Max Vge Ic

6V @ 15V, 16A

Igbt Type

NPT

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Collectoremitter Saturation Voltage

4.5V

Weight

4.500005g

Qualification Status

Not Qualified

Current Collector Pulsed Icm

75A

Transistor Application

POWER CONTROL

Jesd30 Code

R-PSSO-G2

Switching Energy

2.97mJ (on), 790μJ (off)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gateemitter Voltagemax

20V

Td Onoff25c

21ns/336ns

Terminal Sayısı

2

Transistor Element Material

SILICON

Çalışma Sıcaklığı

-55°C~150°C TJ

Max Power Dissipation

250W

JESD-609 Kodu

e3

Number Of Elements

1

Fabrika Tedarik Süresi

24 Weeks

Gateemitter Thr Voltagemax

5V

Terminal Formu

GULL WING

Kılıf / Paket

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Fall Timemax Tf

80ns

Gate Charge

140nC

Max Collector Current

24A

Polaritychannel Type

N-CHANNEL

Test Conditions

850V, 24A, 10 Ω, 15V

Element Configuration

Single

Power Max

250W

Voltage Collector Emitter Breakdown Max

1700V

Kurşunsuz

Lead Free

RoHS Durumu

ROHS3 Compliant

Parça Durumu

Active