IXGT20N60B

Teknik Özellikler

Test Conditions

480V, 20A, 10 Ω, 15V

Element Configuration

Single

Power Max

150W

Weight

4.500005g

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Qualification Status

Not Qualified

Kılıf / Paket

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Fall Timemax Tf

150ns

Collector Emitter Voltage Vceo

600V

Gate Charge

90nC

Max Collector Current

40A

Turn On Time

50 ns

Polaritychannel Type

N-CHANNEL

Terminal Kaplaması

Matte Tin (Sn)

Case Connection

COLLECTOR

Yayın Yılı

2000

Vceon Max Vge Ic

2V @ 15V, 20A

Kurşunsuz Kodu

yes

Çalışma Sıcaklığı

-55°C~150°C TJ

Ambalaj

Tube

Max Power Dissipation

150W

JESD-609 Kodu

e3

Seri

HiPerFAST™

Montaj Tipi

Surface Mount

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Number Of Elements

1

Pin Sayısı

3

Terminal Formu

GULL WING

Gateemitter Thr Voltagemax

5V

Montaj

Surface Mount

Temel Parça No

IXG*20N60

Switching Energy

150μJ (on), 700μJ (off)

Jesd30 Code

R-PSSO-G2

Current Collector Pulsed Icm

80A

Transistor Application

POWER CONTROL

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Element Material

SILICON

Td Onoff25c

15ns/150ns

RoHS Durumu

RoHS Compliant

Gateemitter Voltagemax

20V