IXGT16N170

Teknik Özellikler

Igbt Type

NPT

Qualification Status

Not Qualified

Collectoremitter Saturation Voltage

2.7V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Weight

4.500005g

Turn On Time

90 ns

Collector Emitter Voltage Vceo

1.7kV

Yayın Yılı

2006

Kurşunsuz Kodu

yes

Vceon Max Vge Ic

3.5V @ 15V, 16A

Case Connection

COLLECTOR

Terminal Kaplaması

Matte Tin (Sn)

JESD-609 Kodu

e3

REACH Uyumluluk Kodu

not_compliant

Max Power Dissipation

190W

Çalışma Sıcaklığı

-55°C~150°C TJ

Gateemitter Thr Voltagemax

5V

Terminal Formu

THROUGH-HOLE

Number Of Elements

1

Fabrika Tedarik Süresi

24 Weeks

Nem Hassasiyeti (MSL)

1 (Unlimited)

Current Collector Pulsed Icm

80A

Transistor Application

POWER CONTROL

Jesd30 Code

R-PSFM-T3

Switching Energy

9.3mJ (off)

Gateemitter Voltagemax

20V

Td Onoff25c

45ns/400ns

Terminal Sayısı

3

Transistor Element Material

SILICON

Element Configuration

Single

Test Conditions

1360V, 16A, 10 Ω, 15V

Voltage Collector Emitter Breakdown Max

1700V

Gate Charge

78nC

Max Collector Current

32A

Kılıf / Paket

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Fall Timemax Tf

1100ns

Polaritychannel Type

N-CHANNEL

Ambalaj

Tube

Power Dissipation

190W

Montaj

Surface Mount