IXGP30N60B4D1

Teknik Özellikler

Gateemitter Voltagemax

20V

Max Collector Current

56A

Gate Charge

77nC

Case Connection

COLLECTOR

Transistor Application

POWER CONTROL

Yayın Yılı

2013

Power Max

190W

Gateemitter Thr Voltagemax

5V

Giriş Tipi

Standard

Montaj

Through Hole

Test Conditions

400V, 24A, 10 Ω, 15V

Max Power Dissipation

190W

Turn Off Timenom Toff

511 ns

Terminal Sayısı

3

Pin Sayısı

3

Igbt Type

PT

Configuration

SINGLE WITH BUILT-IN DIODE

Collectoremitter Breakdown Voltage

600V

Polaritychannel Type

N-CHANNEL

Ambalaj

Tube

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-55°C~150°C TJ

Qualification Status

Not Qualified

Kılıf / Paket

TO-220-3

Reverse Recovery Time

30 ns

Vceon Max Vge Ic

1.7V @ 15V, 24A

RoHS Durumu

RoHS Compliant

Montaj Tipi

Through Hole

Terminal Pozisyonu

SINGLE

Td Onoff25c

21ns/200ns

Switching Energy

440μJ (on), 700μJ (off)

Number Of Elements

1

Turn On Time

53 ns

Jedec95 Code

TO-220AB

Collector Emitter Voltage Vceo

1.7V

Current Collector Pulsed Icm

156A

Additional Feature

LOW CONDUCTION LOSS

Transistor Element Material

SILICON

Parça Durumu

Obsolete

Jesd30 Code

R-PSFM-T3