IXGP16N60B2D1

Teknik Özellikler

Montaj Tipi

Through Hole

Reverse Recovery Time

30ns

RoHS Durumu

RoHS Compliant

Vceon Max Vge Ic

1.95V @ 15V, 12A

Kılıf / Paket

TO-220-3

Td Onoff25c

18ns/73ns

Element Configuration

Single

Collectoremitter Saturation Voltage

2.3V

Current Collector Pulsed Icm

100A

Collector Emitter Voltage Vceo

600V

Jedec95 Code

TO-220AB

Kurşunsuz Kodu

yes

Terminal Kaplaması

Pure Tin (Sn)

Turn On Time

43 ns

Number Of Elements

1

Switching Energy

160μJ (on), 120μJ (off)

Seri

HiPerFAST™

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Jesd30 Code

R-PSFM-T3

Transistor Element Material

SILICON

Parça Durumu

Obsolete

Gate Charge

24nC

Gateemitter Voltagemax

20V

Max Collector Current

40A

Temel Parça No

IXG*16N60

Test Conditions

400V, 12A, 22 Ω, 15V

Montaj

Through Hole

Max Power Dissipation

150W

Weight

2.299997g

Power Max

150W

Gateemitter Thr Voltagemax

5.5V

Giriş Tipi

Standard

Transistor Application

POWER CONTROL

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Yayın Yılı

2010

Case Connection

COLLECTOR

Igbt Type

PT

Pin Sayısı

3

Turn Off Timenom Toff

280 ns

Terminal Sayısı

3