IXGN50N120C3H1

Teknik Özellikler

Seri

GenX3™

Turn On Time

60 ns

Input Capacitance Cies Vce

4.3nF @ 25V

Number Of Elements

1

Terminal Formu

UNSPECIFIED

Voltage Collector Emitter Breakdown Max

1200V

Collector Emitter Voltage Vceo

4.2V

Terminal Kaplaması

Nickel (Ni)

Kurşunsuz Kodu

yes

Transistor Element Material

SILICON

Parça Durumu

Active

Power Dissipation

460W

Additional Feature

ULTRA FAST, UL RECOGNIZED

Input

Standard

Jesd30 Code

R-XUFM-X4

Current Collector Cutoff Max

250μA

Kılıf / Paket

SOT-227-4, miniBLOC

Montaj Tipi

Chassis Mount

RoHS Durumu

ROHS3 Compliant

Vceon Max Vge Ic

4.2V @ 15V, 40A

Terminal Pozisyonu

UPPER

Collectoremitter Saturation Voltage

1.2kV

Turn Off Timenom Toff

485 ns

Terminal Sayısı

4

Igbt Type

PT

Pin Sayısı

4

Collectoremitter Breakdown Voltage

1.2kV

Configuration

Single

Çalışma Sıcaklığı

-55°C~150°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Polaritychannel Type

N-CHANNEL

Ntc Thermistor

No

Fabrika Tedarik Süresi

8 Weeks

Input Capacitance

4.3nF

Max Collector Current

95A

Gateemitter Voltagemax

20V

Yayın Yılı

2010

Transistor Application

POWER CONTROL

Case Connection

ISOLATED

Max Power Dissipation

460W