IXGN120N60A3

Teknik Özellikler

Collectoremitter Breakdown Voltage

600V

Configuration

Single

Çalışma Sıcaklığı

-55°C~150°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Polaritychannel Type

N-CHANNEL

Igbt Type

PT

Pin Sayısı

4

Yayın Yılı

2009

Transistor Application

POWER CONTROL

Case Connection

ISOLATED

Weight

38.000013g

Montaj

Chassis Mount

Power Max

595W

Fabrika Tedarik Süresi

30 Weeks

Input Capacitance

14.8nF

Additional Feature

LOW CONDUCTION LOSS, UL RECOGNIZED

Input

Standard

Number Of Elements

1

Terminal Formu

UNSPECIFIED

Kurşunsuz Kodu

yes

Vceon Max Vge Ic

1.35V @ 15V, 100A

RoHS Durumu

ROHS3 Compliant

Supplier Package

SOT-227B

Terminal Sayısı

4

Turn Off Timenom Toff

830 ns

Max Power Dissipation

595W

Temel Parça No

IXG*120N60

Ntc Thermistor

No

Max Collector Current

200A

Gateemitter Voltagemax

20V

Parça Durumu

Active

Transistor Element Material

SILICON

Ppap

No

Eu Rohs

Compliant with Exemption

Automotive

No

Jesd30 Code

R-PUFM-X4

Current Collector Cutoff Max

50μA

Seri

GenX3™

Turn On Time

123 ns

Input Capacitance Cies Vce

14.8nF @ 25V