IXGK72N60A3H1

Teknik Özellikler

Kurşunsuz Kodu

yes

Number Of Elements

1

Power Dissipation

540W

Additional Feature

LOW CONDUCTION LOSS

Vceon Max Vge Ic

1.35V @ 15V, 60A

RoHS Durumu

ROHS3 Compliant

Collectoremitter Saturation Voltage

1.35V

Igbt Type

PT

Pin Sayısı

3

Çalışma Sıcaklığı

-55°C~150°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tube

Polaritychannel Type

N-CHANNEL

Collectoremitter Breakdown Voltage

600V

Configuration

SINGLE WITH BUILT-IN DIODE

Fabrika Tedarik Süresi

8 Weeks

Test Conditions

480V, 50A, 3 Ω, 15V

Montaj

Through Hole

Gateemitter Thr Voltagemax

5V

Yayın Yılı

2009

Transistor Application

POWER CONTROL

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

JESD-609 Kodu

e1

Case Connection

COLLECTOR

Current Collector Pulsed Icm

400A

Collector Emitter Voltage Vceo

1.35V

Terminal Kaplaması

TIN SILVER COPPER

Seri

GenX3™

Turn On Time

63 ns

Switching Energy

1.4mJ (on), 3.5mJ (off)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Jesd30 Code

R-PSFM-T3

Parça Durumu

Active

Transistor Element Material

SILICON

Montaj Tipi

Through Hole

Reverse Recovery Time

140ns

Kılıf / Paket

TO-264-3, TO-264AA

Td Onoff25c

31ns/320ns

Terminal Pozisyonu

SINGLE

Turn Off Timenom Toff

885 ns