IXGK320N60B3

Teknik Özellikler

Power Dissipation

1.7kW

Package Height

26.16(Max)

Additional Feature

LOW CONDUCTION LOSS

Minimum Operating Temperature C

-55

Number Of Elements

1

Maximum Power Dissipation Mw

1700000

Kurşunsuz Kodu

yes

Collectoremitter Saturation Voltage

600V

Maximum Continuous Collector Current A

500

RoHS Durumu

ROHS3 Compliant

Vceon Max Vge Ic

1.6V @ 15V, 100A

Configuration

Single

Collectoremitter Breakdown Voltage

600V

Tab

Tab

Çalışma Sıcaklığı

-55°C~150°C TJ

Polaritychannel Type

N-CHANNEL

Ambalaj

Tube

Maximum Gate Emitter Voltage V

±20

Nem Hassasiyeti (MSL)

1 (Unlimited)

Igbt Type

PT

Pin Sayısı

3

Transistor Application

POWER CONTROL

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Yayın Yılı

2010

Case Connection

COLLECTOR

JESD-609 Kodu

e1

Test Conditions

480V, 100A, 1 Ω, 15V

Montaj

Through Hole

Gateemitter Thr Voltagemax

5V

Power Max

1700W

Typical Collector Emitter Saturation Voltage V

2

Fabrika Tedarik Süresi

30 Weeks

Transistor Element Material

SILICON

Parça Durumu

Active

Ppap

No

Automotive

No

Eu Rohs

Compliant with Exemption

Jesd30 Code

R-PSFM-T3

Switching Energy

2.7mJ (on), 3.5mJ (off)

Turn On Time

115 ns