IXGH32N90B2

Teknik Özellikler

Element Configuration

Single

Td Onoff25c

20ns/260ns

Kılıf / Paket

TO-247-3

Vceon Max Vge Ic

2.7V @ 15V, 32A

RoHS Durumu

ROHS3 Compliant

Montaj Tipi

Through Hole

Transistor Element Material

SILICON

Parça Durumu

Active

Jesd30 Code

R-PSFM-T3

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Switching Energy

2.6mJ (off)

Number Of Elements

1

Turn On Time

42 ns

Seri

HiPerFAST™

Kurşunsuz Kodu

yes

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Jedec95 Code

TO-247AD

Collector Emitter Voltage Vceo

900V

Current Collector Pulsed Icm

200A

Case Connection

COLLECTOR

JESD-609 Kodu

e1

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Application

POWER CONTROL

Yayın Yılı

2006

Power Max

300W

Giriş Tipi

Standard

Test Conditions

720V, 32A, 5 Ω, 15V

Montaj

Through Hole

Temel Parça No

IXG*32N90

Max Power Dissipation

300W

Weight

6.500007g

Fabrika Tedarik Süresi

8 Weeks

Max Collector Current

64A

Gate Charge

89nC

Collectoremitter Breakdown Voltage

900V

Ambalaj

Tube

Polaritychannel Type

N-CHANNEL

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-55°C~150°C TJ

Qualification Status

Not Qualified