IXGH30N60A

Teknik Özellikler

Rise Timemax

200ns

Max Collector Current

50A

Gateemitter Voltagemax

30V

Max Power Dissipation

200W

Montaj

Through Hole

Temel Parça No

IXG*30N60

Gateemitter Thr Voltagemax

5V

Giriş Tipi

Standard

Yayın Yılı

1997

Turn On Delay Time

100 ns

Transistor Application

POWER CONTROL

Case Connection

COLLECTOR

Continuous Drain Current Id

60A

Terminal Sayısı

3

Turn Off Timenom Toff

850 ns

Qualification Status

Not Qualified

Vcesatmax

3 V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tube

Polaritychannel Type

N-CHANNEL

Collectoremitter Breakdown Voltage

600V

Operating Temperature Max

150°C

Montaj Tipi

Through Hole

Vceon Max Vge Ic

3V @ 15V, 30A

RoHS Durumu

RoHS Compliant

Kılıf / Paket

TO-247-3

Kurşunsuz

Lead Free

Drain To Source Breakdown Voltage

600V

Turn Off Delay Time

500 ns

Element Configuration

Single

Jedec95 Code

TO-247AD

Collector Emitter Voltage Vceo

3V

Turn On Time

300 ns

Number Of Elements

1

Drain To Source Resistance

2.6Ohm

Jesd30 Code

R-PSFM-T3

Transistor Element Material

SILICON

Parça Durumu

Obsolete

Power Dissipation

200W

Additional Feature

HIGH SPEED