IXGH30N120B3D1

Teknik Özellikler

Kurşunsuz

Lead Free

Td Onoff25c

16ns/127ns

Element Configuration

Single

Collectoremitter Saturation Voltage

2.96V

Montaj Tipi

Through Hole

Reverse Recovery Time

100ns

RoHS Durumu

ROHS3 Compliant

Vceon Max Vge Ic

3.5V @ 15V, 30A

Kılıf / Paket

TO-247-3

Power Dissipation

300W

Parça Durumu

Active

Transistor Element Material

SILICON

Additional Feature

LOW CONDUCTION LOSS

Jedec95 Code

TO-247AD

Collector Emitter Voltage Vceo

1.2kV

Kurşunsuz Kodu

yes

Turn On Time

56 ns

Number Of Elements

1

Switching Energy

3.47mJ (on), 2.16mJ (off)

Seri

GenX3™

Voltage Collector Emitter Breakdown Max

1200V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Temel Parça No

IXG*30N120

Test Conditions

960V, 30A, 5 Ω, 15V

Montaj

Through Hole

Max Power Dissipation

300W

Weight

6.500007g

Giriş Tipi

Standard

Gateemitter Thr Voltagemax

5V

Transistor Application

POWER CONTROL

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Yayın Yılı

2008

Case Connection

COLLECTOR

Gate Charge

87nC

Gateemitter Voltagemax

20V

Max Collector Current

150A

Fabrika Tedarik Süresi

20 Weeks

Qualification Status

Not Qualified

Çalışma Sıcaklığı

-55°C~150°C TJ

Ambalaj

Tube