IXGH2N250

Teknik Özellikler

Minimum Operating Temperature C

-55

Package Height

21.46(Max)

Additional Feature

LOW CONDUCTION LOSS

Hts

8541.29.00.95

Kurşunsuz Kodu

yes

Maximum Power Dissipation Mw

32

Number Of Elements

1

Kurşunsuz

Lead Free

Maximum Continuous Collector Current A

5.5

Svhc

Yes

RoHS Durumu

ROHS3 Compliant

Vceon Max Vge Ic

3.1V @ 15V, 2A

Çalışma Sıcaklığı

-55°C~150°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Maximum Gate Emitter Voltage V

±20

Ambalaj

Tube

Polaritychannel Type

N-CHANNEL

Eccn Us

EAR99

Collectoremitter Breakdown Voltage

2.5kV

Configuration

SINGLE

Tab

Tab

Pin Sayısı

3

Montaj

Through Hole

Power Max

32W

Gateemitter Thr Voltagemax

5.5V

Yayın Yılı

2009

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Application

POWER CONTROL

JESD-609 Kodu

e1

Case Connection

COLLECTOR

Typical Collector Emitter Saturation Voltage V

2.6

Fabrika Tedarik Süresi

28 Weeks

Jesd30 Code

R-PSFM-T3

Transistor Element Material

SILICON

Parça Durumu

Active

Ppap

No

Eu Rohs

Compliant with Exemption

Automotive

No

Current Collector Pulsed Icm

13.5A

Collector Emitter Voltage Vceo

3.1V