IXGA16N60B2D1

Teknik Özellikler

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tube

Transistor Element Material

SILICON

Kurşunsuz Kodu

yes

Collectoremitter Saturation Voltage

2.3V

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Seri

HiPerFAST™

Element Configuration

Single

Giriş Tipi

Standard

Collectoremitter Breakdown Voltage

600V

Current Collector Pulsed Icm

100A

Reverse Recovery Time

30ns

Gateemitter Thr Voltagemax

5.5V

Test Conditions

400V, 12A, 22 Ω, 15V

RoHS Durumu

RoHS Compliant

Montaj

Surface Mount

Terminal Kaplaması

Pure Tin (Sn)

Jesd30 Code

R-PSSO-G2

Igbt Type

PT

Yayın Yılı

2010

Number Of Elements

1

Collector Emitter Voltage Vceo

600V

Case Connection

COLLECTOR

Switching Energy

160μJ (on), 120μJ (off)

Transistor Application

POWER CONTROL

Terminal Sayısı

2

Gate Charge

24nC

Max Collector Current

40A

Td Onoff25c

18ns/73ns

Parça Durumu

Obsolete

Turn Off Timenom Toff

280 ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Gateemitter Voltagemax

20V

Power Max

150W

Pin Sayısı

4

Temel Parça No

IXG*16N60

Weight

1.59999g

Terminal Formu

GULL WING

Montaj Tipi

Surface Mount