IXEH40N120D1

Teknik Özellikler

Collectoremitter Breakdown Voltage

1.2kV

RoHS Durumu

RoHS Compliant

Igbt Type

NPT

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Case Connection

COLLECTOR

Montaj Tipi

Through Hole

Collector Emitter Voltage Vceo

3V

Collectoremitter Saturation Voltage

2.4V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Ambalaj

Tube

Parça Durumu

Obsolete

Yayın Yılı

2004

Gate Charge

150nC

Turn On Time

135 ns

Vceon Max Vge Ic

3V @ 15V, 40A

Switching Energy

6.1mJ (on), 3mJ (off)

Jesd30 Code

R-PSFM-T3

Giriş Tipi

Standard

Turn Off Timenom Toff

490 ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Polaritychannel Type

N-CHANNEL

Qualification Status

Not Qualified

Voltage Collector Emitter Breakdown Max

1200V

Test Conditions

600V, 40A, 39 Ω, 15V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Max

300W

Montaj

Through Hole

Jedec95 Code

TO-247AD

Gateemitter Voltagemax

20V

Element Configuration

Single

Max Collector Current

60A

Gateemitter Thr Voltagemax

6.5V

Terminal Sayısı

3

Transistor Element Material

SILICON

Pin Sayısı

3

Max Power Dissipation

300W

Reverse Recovery Time

180 ns

Transistor Application

POWER CONTROL

Number Of Elements

1

Kılıf / Paket

TO-3P-3 Full Pack