IXDR35N60BD1

Teknik Özellikler

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Case Connection

ISOLATED

RoHS Durumu

ROHS3 Compliant

Igbt Type

NPT

Collectoremitter Breakdown Voltage

600V

Ambalaj

Tube

Parça Durumu

Active

Polarity

NPN

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Montaj Tipi

Through Hole

Collector Emitter Voltage Vceo

600V

Collectoremitter Saturation Voltage

2.2V

Giriş Tipi

Standard

Current Collector Pulsed Icm

48A

Turn On Time

75 ns

Vceon Max Vge Ic

2.7V @ 15V, 35A

Kurşunsuz

Lead Free

Switching Energy

1.6mJ (on), 800μJ (off)

Gate Charge

140nC

Power Dissipation

125W

Yayın Yılı

2006

Temel Parça No

IXD*35N60

Turn Off Delay Time

320 ns

Pin Sayısı

3

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Turn Off Timenom Toff

390 ns

Rise Time

70ns

Çalışma Sıcaklığı

-55°C~150°C TJ

JESD-609 Kodu

e1

Montaj

Through Hole

Test Conditions

300V, 35A, 10 Ω, 15V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Qualification Status

Not Qualified

Fabrika Tedarik Süresi

32 Weeks

Max Collector Current

38A

Kurşunsuz Kodu

yes

Element Configuration

Single

Max Power Dissipation

125W

Reverse Recovery Time

40ns

Transistor Element Material

SILICON