IXDR30N120

Teknik Özellikler

Kurşunsuz Kodu

yes

Gateemitter Voltagemax

20V

ECCN Kodu

EAR99

Element Configuration

Single

Fabrika Tedarik Süresi

32 Weeks

Test Conditions

600V, 30A, 47 Ω, 15V

Transistor Application

POWER CONTROL

Kılıf / Paket

ISOPLUS247™

Additional Feature

HIGH SPEED SWITCHING, LOW SWITCHING LOSS, FAST RECOVERY

Terminal Sayısı

3

Turn On Delay Time

100 ns

Max Power Dissipation

200W

Transistor Element Material

SILICON

Pin Sayısı

3

Polarity

NPN

Montaj Tipi

Through Hole

Collector Emitter Voltage Vceo

1.2kV

Collectoremitter Saturation Voltage

2.4V

Parça Durumu

Active

Ambalaj

Tube

Igbt Type

NPT

Collectoremitter Breakdown Voltage

1.2kV

Rise Time

70ns

Temel Parça No

IXD*30N120

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Reach Svhc

No SVHC

Turn On Time

170 ns

Current Collector Pulsed Icm

60A

Power Dissipation

200W

Yayın Yılı

2004

Gate Charge

120nC

Giriş Tipi

Standard

Max Collector Current

50A

Gateemitter Thr Voltagemax

6.5V

Voltage Collector Emitter Breakdown Max

1200V

Qualification Status

Not Qualified

Montaj

Through Hole

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

1

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED