IXBX55N300

Teknik Özellikler

Vceon Max Vge Ic

3.2V @ 15V, 55A

Case Connection

COLLECTOR

Transistor Element Material

SILICON

Number Of Elements

1

Nem Hassasiyeti (MSL)

1 (Unlimited)

Pin Sayısı

3

Max Collector Current

130A

Montaj

Through Hole

Yayın Yılı

2011

Çalışma Sıcaklığı

-55°C~150°C TJ

Giriş Tipi

Standard

Current Collector Pulsed Icm

600A

Gateemitter Voltagemax

25V

Qualification Status

Not Qualified

Voltage Collector Emitter Breakdown Max

3000V

Reverse Recovery Time

1.9 μs

RoHS Durumu

ROHS3 Compliant

Kurşunsuz Kodu

yes

Jesd30 Code

R-PSFM-T3

Terminal Pozisyonu

SINGLE

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transistor Application

POWER CONTROL

Max Power Dissipation

625W

Ambalaj

Tube

JESD-609 Kodu

e1

Kılıf / Paket

TO-247-3

Parça Durumu

Not For New Designs

Turn Off Timenom Toff

475 ns

Gateemitter Thr Voltagemax

5V

Polaritychannel Type

N-CHANNEL

Montaj Tipi

Through Hole

Additional Feature

LOW CONDUCTION LOSS

Power Max

625W

Turn On Time

637 ns

Collectoremitter Breakdown Voltage

3kV

Configuration

SINGLE WITH BUILT-IN DIODE

Collector Emitter Voltage Vceo

3.2V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Sayısı

3

Fabrika Tedarik Süresi

8 Weeks