IXBH28N170A

Teknik Özellikler

Seri

BIMOSFET™

Pin Sayısı

3

Gate Charge

105nC

Terminal Sayısı

3

Fabrika Tedarik Süresi

18 Weeks

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Collector Emitter Voltage Vceo

6V

Collectoremitter Breakdown Voltage

1.7kV

Power Max

300W

Polaritychannel Type

N-CHANNEL

Montaj Tipi

Through Hole

Td Onoff25c

35ns/265ns

Parça Durumu

Active

Kılıf / Paket

TO-247-3

Max Power Dissipation

300W

Ambalaj

Tube

Test Conditions

850V, 14A, 10 Ω, 15V

Collectoremitter Saturation Voltage

4.7V

Transistor Application

POWER CONTROL

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

RoHS Durumu

ROHS3 Compliant

Kurşunsuz Kodu

yes

Qualification Status

Not Qualified

Reverse Recovery Time

360 ns

Voltage Collector Emitter Breakdown Max

1700V

Giriş Tipi

Standard

Current Collector Pulsed Icm

60A

Çalışma Sıcaklığı

-55°C~150°C TJ

Yayın Yılı

2005

Montaj

Through Hole

Pin Sayısı

3

Max Collector Current

30A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Jedec95 Code

TO-247AD

Switching Energy

1.2mJ (off)

Case Connection

COLLECTOR

Transistor Element Material

SILICON

Number Of Elements

1

Element Configuration

Single

Vceon Max Vge Ic

6V @ 15V, 14A