IXBH24N170

Teknik Özellikler

Gateemitter Thr Voltagemax

5V

Additional Feature

LOW CONDUCTION LOSS

Power Max

250W

Ambalaj

Tube

Kılıf / Paket

TO-247-3

Gate To Source Voltage Vgs

30V

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Collector Emitter Voltage Vceo

2.5V

Max Collector Current

60A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vceon Max Vge Ic

2.5V @ 15V, 24A

Fall Time Typ

26 ns

Transistor Element Material

SILICON

Number Of Elements

1

Qualification Status

Not Qualified

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transistor Application

POWER CONTROL

Yayın Yılı

2006

Power Dissipation

38W

Montaj

Through Hole

Current Collector Pulsed Icm

230A

Turn Off Timenom Toff

1285 ns

Polaritychannel Type

N-CHANNEL

Montaj Tipi

Through Hole

Drain To Source Resistance

1.4Ohm

Parça Durumu

Active

JESD-609 Kodu

e1

Max Power Dissipation

250W

Turn Off Delay Time

65 ns

Gate Charge

140nC

Terminal Sayısı

3

Fabrika Tedarik Süresi

28 Weeks

Seri

BIMOSFET™

Collectoremitter Breakdown Voltage

1.7kV

Turn On Time

190 ns

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Pin Sayısı

3

Jedec95 Code

TO-247AD

Rise Time

28ns

Element Configuration

Single