IXBH20N300

Teknik Özellikler

Vceon Max Vge Ic

3.2V @ 15V, 20A

Number Of Elements

1

Case Connection

COLLECTOR

Transistor Element Material

SILICON

Pin Sayısı

3

Max Collector Current

50A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-55°C~150°C TJ

Yayın Yılı

2009

Montaj

Through Hole

Current Collector Pulsed Icm

140A

Giriş Tipi

Standard

Jesd30 Code

R-PSFM-T3

RoHS Durumu

ROHS3 Compliant

Kurşunsuz Kodu

yes

Voltage Collector Emitter Breakdown Max

3000V

Reverse Recovery Time

1.35 μs

Gateemitter Voltagemax

20V

Qualification Status

Not Qualified

Terminal Pozisyonu

SINGLE

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transistor Application

POWER CONTROL

JESD-609 Kodu

e1

Max Power Dissipation

250W

Ambalaj

Tube

Kılıf / Paket

TO-247-3

Montaj Tipi

Through Hole

Turn Off Timenom Toff

695 ns

Gateemitter Thr Voltagemax

5V

Polaritychannel Type

N-CHANNEL

Parça Durumu

Active

Kurşunsuz

Lead Free

Power Max

250W

Additional Feature

LOW CONDUCTION LOSS

Collectoremitter Breakdown Voltage

3kV

Turn On Time

608 ns

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Collector Emitter Voltage Vceo

3.2V

Configuration

SINGLE WITH BUILT-IN DIODE

Gate Charge

105nC