FMM50-025TF

Teknik Özellikler

Drain To Source Voltage Vdss

250V

RoHS Durumu

ROHS3 Compliant

Gate Charge Qg Max Vgs

78nC @ 10V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Kılıf / Paket

i4-Pac™-5

Power Max

125W

Seri

HiPerFET™

Kurşunsuz Kodu

yes

Temel Parça No

FMM

Case Connection

ISOLATED

Qualification Status

Not Qualified

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj Tipi

Through Hole

Rds On Max Id Vgs

50m Ω @ 25A, 10V

Avalanche Energy Rating Eas

400 mJ

Number Of Elements

2

Max Power Dissipation

125W

Fabrika Tedarik Süresi

30 Weeks

Parça Durumu

Active

Vgsth Max Id

4.5V @ 250μA

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

4000pF @ 25V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Montaj

Through Hole

Transistor Application

SWITCHING

Yayın Yılı

2008

Continuous Drain Current Id

30A

Çalışma Sıcaklığı

-55°C~150°C TJ

Pin Sayısı

5

Ambalaj

Tube

JESD-609 Kodu

e1

ECCN Kodu

EAR99

Configuration

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

Terminal Pozisyonu

SINGLE

Additional Feature

AVALANCHE RATED, UL RECOGNIZED

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Sayısı

5

Fet Type

2 N-Channel (Dual)

Operating Mode

ENHANCEMENT MODE