FMM110-015X2F

Teknik Özellikler

Terminal Sayısı

5

Terminal Kaplaması

TIN SILVER COPPER

Drainsource On Resistancemax

0.02Ohm

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Additional Feature

UL RECOGNIZED, AVALANCHE RATED

Fet Feature

Standard

Pin Sayısı

5

Operating Mode

ENHANCEMENT MODE

Fet Type

2 N-Channel (Dual)

Ambalaj

Tube

Pin Sayısı

5

Çalışma Sıcaklığı

-55°C~175°C TJ

Yayın Yılı

2009

Continuous Drain Current Id

53A

Transistor Application

SWITCHING

Montaj

Through Hole

Pulsed Drain Currentmax Idm

300A

ECCN Kodu

EAR99

Terminal Pozisyonu

SINGLE

Configuration

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

JESD-609 Kodu

e1

Rds On Max Id Vgs

20m Ω @ 55A, 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj Tipi

Through Hole

Qualification Status

Not Qualified

Case Connection

ISOLATED

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Input Capacitance Ciss Max Vds

8600pF @ 25V

Transistor Element Material

SILICON

Max Power Dissipation

180W

Parça Durumu

Active

Vgsth Max Id

4.5V @ 250μA

Avalanche Energy Rating Eas

800 mJ

Number Of Elements

2

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Gate Charge Qg Max Vgs

150nC @ 10V

RoHS Durumu

ROHS3 Compliant

Drain To Source Voltage Vdss

150V

Temel Parça No

FMM

Power Max

180W