RT3J55M

Teknik Özellikler

Power Dissipationmax Abs

0.15 W

Terminal Pozisyonu

DUAL

Package Shape

RECTANGULAR

Power Dissipation Ambientmax

0.15 W

Operating Mode

ENHANCEMENT MODE

Operating Temperaturemax

150 °C

Transistor Application

SWITCHING

Ds Breakdown Voltagemin

50 V

ECCN Kodu

EAR99

Terminal Formu

GULL WING

Package Description

SMALL OUTLINE, R-PDSO-G6

Package Body Material

PLASTIC/EPOXY

REACH Uyumluluk Kodu

unknown

Yüzey Montaj

YES

Drain Currentmax Id

0.1 A

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Part Life Cycle Code

Contact Manufacturer

Transistor Element Material

SILICON

Number Of Terminals

6

Package Style

SMALL OUTLINE

Number Of Elements

2

Polaritychannel Type

P-CHANNEL

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Jesd30 Code

R-PDSO-G6

Ihs Manufacturer

ISAHAYA ELECTRONICS CORP