IRG7PH30K10DPBF

Teknik Özellikler

Igbt Type

Trench

Vceon Max Vge Ic

2.35V @ 15V, 9A

Switching Energy

530µJ (on), 380µJ (off)

Genişlik

5.3086mm

Tedarikçi Cihaz Paketi

TO-247AC

Gate Charge

45 nC

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Test Conditions

600V, 9A, 22Ohm, 15V

Giriş Tipi

Standard

Collectoremitter Breakdown Voltage

1.2kV

Terminal Kaplaması

MATTE TIN OVER NICKEL

Tepe Reflow Süresi (maks. sn)

30

Montaj Tipi

Through Hole

Turn Off Delay Time

130 ns

Currentcollector Ic Max

30 A

Transistor Element Material

SILICON

Pin Sayısı

3

Number Of Elements

1

Tepe Reflow Sıcaklığı (°C)

250

Gateemitter Thr Voltagemax

7.5V

Kılıf / Paket

TO-247-3

Collector Emitter Voltage Vceo

2.35V

Ürün Durumu

Active

Reverse Recovery Time Trr

140 ns

Case Connection

COLLECTOR

Power Dissipation

180W

Voltage Collector Emitter Breakdown Max

1200 V

Yayın Yılı

2009

Nem Hassasiyeti (MSL)

1 (Unlimited)

Max Collector Current

30A

Ambalaj

Tube

Element Configuration

Single

Turn On Delay Time

23 ns

Fall Timemax Tf

56ns

Transistor Application

POWER CONTROL

Reverse Recovery Time

140ns

Turn Off Timenom Toff

390 ns

Power Max

180 W

Reach Svhc

No SVHC

Uzunluk

15.87mm