IRG4PC50KPBF

Teknik Özellikler

Switching Energy

490µJ (on), 680µJ (off)

Vceon Max Vge Ic

2.2V @ 15V, 30A

Genişlik

5.3mm

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Gate Charge

200 nC

Tedarikçi Cihaz Paketi

TO-247AC

Test Conditions

480V, 30A, 5Ohm, 15V

Giriş Tipi

Standard

Collectoremitter Breakdown Voltage

600V

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Tepe Reflow Süresi (maks. sn)

30

Currentcollector Ic Max

52 A

Turn Off Delay Time

160 ns

Montaj Tipi

Through Hole

Pin Sayısı

3

Transistor Element Material

SILICON

Number Of Elements

1

Tepe Reflow Sıcaklığı (°C)

250

Gateemitter Thr Voltagemax

6V

Additional Feature

LOW CONDUCTION LOSS

Collector Emitter Voltage Vceo

2.2V

Kılıf / Paket

TO-247-3

Ürün Durumu

Active

Case Connection

COLLECTOR

Power Dissipation

200W

Rise Time

34ns

Voltage Collector Emitter Breakdown Max

600 V

Akım Değeri

52A

Yayın Yılı

2000

Nem Hassasiyeti (MSL)

1 (Unlimited)

Max Collector Current

52A

Ambalaj

Bulk

Element Configuration

Single

Fall Timemax Tf

120ns

Turn On Delay Time

38 ns

Transistor Application

POWER CONTROL

Power Max

200 W

Turn Off Timenom Toff

430 ns

Reach Svhc

No SVHC

Uzunluk

15.875mm