IRFHE4250DTRPBF

Teknik Özellikler

Threshold Voltage

1.6V

Kılıf / Paket

32-PowerVFQFN

Tedarikçi Cihaz Paketi

32-PQFN (6x6)

Seri

HEXFET®

Ürün Durumu

Active

Power Dissipation

156W

Genişlik

5mm

Vgsth Max Id

2.1V @ 35µA, 2.1V @ 100µA

Power Max

156W (Tc)

ECCN Kodu

EAR99

Drain To Source Voltage Vdss

25V

Uzunluk

6mm

Paket

Bulk

Gate Charge Qg Max Vgs

20nC @ 4.5V, 53nC @ 4.5V

Pin Sayısı

30

Turn On Delay Time

17 ns

Current Continuous Drain Id25

86A (Tc), 303A (Tc)

RoHS Durumu

RoHS Compliant

Rds On Max Id Vgs

2.75mOhm @ 27A, 10V, 900µOhm @ 27A, 10V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Fabrika Tedarik Süresi

18 Weeks

Input Capacitance Ciss Max Vds

1735pF @ 13V, 4765pF @ 13V

Number Of Elements

2

Max Power Dissipation

156W

Reach Svhc

No SVHC

Kurşunsuz

Lead Free

Parça Durumu

Obsolete

Ambalaj

Tape & Reel (TR)

Fet Type

2 N-Channel (Dual)

Montaj

Surface Mount

Gate To Source Voltage Vgs

16V

Rise Time

54ns

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Continuous Drain Current Id

303A

Yükseklik

900μm

Fall Time Typ

16 ns

Montaj Tipi

Surface Mount

Yayın Yılı

2004

Nem Hassasiyeti (MSL)

2 (1 Year)

Temel Parça No

IRFHE4250