IRFB3407ZPBF

Teknik Özellikler

Current Continuous Drain Id25

120A Tc

Rds On Max Id Vgs

6.4m Ω @ 75A, 10V

Montaj

Through Hole

Continuous Drain Current Id

120A

Polaritychannel Type

N-CHANNEL

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Exterior Housing Material

1

Çalışma Sıcaklığı

-55°C~175°C TJ

Package Description

,

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-220-3

Input Capacitance Ciss Max Vds

4750pF @ 50V

Part Life Cycle Code

Transferred

Gate Charge Qg Max Vgs

110nC @ 10V

Ambalaj

Tube

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

230W Tc

REACH Uyumluluk Kodu

unknown

Rohs Code

Yes

Drain To Source Voltage Vdss

75V

Vgsth Max Id

4V @ 150μA

Seri

HEXFET®

Yayın Yılı

2008

Yüzey Montaj

NO

Parça Durumu

Active

Vgs Max

±20V

Montaj Tipi

Through Hole

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

10V

Drain Currentmax Id

120 A

Configuration

SINGLE

ECCN Kodu

EAR99

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Fabrika Tedarik Süresi

12 Weeks

Operating Temperaturemax

175 °C

Ihs Manufacturer

INTERNATIONAL RECTIFIER CORP

Power Dissipationmax Abs

230 W