IRF7904PBF

Teknik Özellikler

Saturation Current

1

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Number Of Terminals

8

Drain To Source Breakdown Voltage

30V

Gate Charge Qg Max Vgs

11nC @ 4.5V

Number Of Elements

2

Ambalaj

Tube

Terminal Pozisyonu

DUAL

Jesd30 Code

R-PDSO-G8

Rohs Code

Yes

REACH Uyumluluk Kodu

compliant

Vgsth Max Id

2.25V @ 25μA

Seri

HEXFET®

Current Continuous Drain Id25

7.6A 11A

Rds On Max Id Vgs

16.2m Ω @ 7.6A, 10V

Ds Breakdown Voltagemin

30 V

Qualification Status

Not Qualified

Package Body Material

PLASTIC/EPOXY

Pin Sayısı

8

Package Shape

RECTANGULAR

Polaritychannel Type

N-CHANNEL

Pulsed Drain Currentmax Idm

89 A

Tepe Reflow Süresi (maks. sn)

30

Radyasyon Dayanımı

No

Configuration

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

Temel Parça No

IRF7904PBF

ECCN Kodu

EAR99

Drainsource On Resistancemax

10.8 Ω

Genişlik

3.9878mm

Kurşunsuz

Exempt

Tepe Reflow Sıcaklığı (°C)

260

Parça Durumu

Obsolete

Transistor Element Material

SILICON

Montaj Tipi

Surface Mount

Fet Type

2 N-Channel (Dual)

Max Power Dissipation

2W

Voltage Rated Dc

30V

Çalışma Sıcaklığı

-55°C~150°C TJ

Package Description

LEAD FREE, SO-8

RoHS Durumu

RoHS Compliant