IRF7465TRPBF

Teknik Özellikler

Radyasyon Dayanımı

No

Ds Breakdown Voltagemin

150 V

Terminal

SMD/SMT

Vgs Max

±30V

Saturation Current

1

Direnç

280mOhm

Pin Sayısı

8

Dual Supply Voltage

150V

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

1.2ns

Drain Currentmax Id

1.9 A

Rohs Code

Yes

Power Dissipation

2.5W

Package Shape

RECTANGULAR

Power Dissipationmax Abs

2.5 W

Terminal Formu

GULL WING

Kurşunsuz

Contains Lead, Lead Free

Tepe Reflow Sıcaklığı (°C)

260

Qualification Status

Not Qualified

Vgsth Max Id

5.5V @ 250μA

Yüzey Montaj

YES

Ambalaj

Tape & Reel (TR)

Part Package Code

SOIC

Part Life Cycle Code

Transferred

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Contact Plating

Tin

Operating Temperaturemax

150 °C

Input Capacitance Ciss Max Vds

330pF @ 25V

Element Configuration

Single

Yükseklik

1.4986mm

Threshold Voltage

5.5V

Rds On Max Id Vgs

280m Ω @ 1.14A, 10V

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Power Dissipation Max

2.5W Ta

Akım Değeri

1.9A

Jesd30 Code

R-PDSO-G8

Current Continuous Drain Id25

1.9A Ta

Terminal Sayısı

8